B.TECH - Semester 3 solid state devices Question Paper 2021 (may)
Practice authentic previous year university questions for better exam preparation.
Sample Questions
- 302 ; SOLID STATE DEVICES (TA) (2008 Scheme) Time : 3 Hours Max. Marks : 100 PART - A Answer all questions. Each question carries 4 marks:
- Explain effective mass?
- Dilferentiale between drift and diffusion in a semiconductor.
- Consider a N-lype Silicon. If it is doped with $2 \times 10^{15} / \mathrm{cm}^{-2} \mathrm{P}$ aloms, find majorily and minorily concentration in the semiconductor at room lemperalure?
- Show that there exists no gradient in Fermi revel in a semiconductor, irrespective of the doping in the semiconductor?
- Differentiate between avalanche breakdown and Zener breakdown in semiconduclor PN junction?
- Draw the energy band diagram of a Schollky diode Formed with N-type semiconduclor and explain?
- Derive the relationship between collector injection efficiency and current Iransfer ratio of a BJT? 8 Explain the C-V characteristics of a MOS capacitor? 9 Explain DIBL in MOSFETs?
- Explain the output characleristics of an IGET? ( $10 \times 4=40$ Marks) P.T.O. Answer any two questions from each Module. Each question carries 10 marks. i1. Explain how mobility of a semiconductor can be measured experimentally. Derive the expre...
- Derive the expression for the width of a depletion region of a PN junction? What will be the expression for the same if it is a one sided junclion?
- Explain a semiconductor junction under equilibrium? Wral happens if a bias is applied across the junclion? Describe using energy band dagrams.
- Explain the effect of forward bias and reverse bias on an ohmic conlact? 15 A $\mathrm{P}^{\prime} \mathrm{N}$ junction has an area of $10^{-2} \mathrm{~cm}^{2}$ and $\mathrm{N}_{v}=2 \times 10^{15} / \mathrm{cm}^{-3}$. Plot the junclion capacitance...
- Explain the working of BJT as a switch?
- Explain channel length modulation and velocity saturalion in MOSFETs?
- Explain the working of a JFET. Derive the expression for its drain current?
- Explain the principle of working of a UJT? With the help of an equivalent circuit derive the expression for the intrinsic stand-off ratio of the UJT. ( $6 \times 10=60$ Marks)