B.TECH - Semester 6 vlsi design Question Paper 2013 (apr)
Practice authentic previous year university questions for better exam preparation.
Sample Questions
- What is the need for epitaxial growth in Si IC fabrication?
- 602 - VLSI DESIGN (T) (2013 Scheme) Max. Marks : 100 Time : 3 Hours PART,-A Answer all questions. Each question carries $\mathbf{2}$ marks.
- List the advantages of dry oxidation over wet oxidation? (any two)
- Brief the features of electron beam lithography. (any two)
- What are the advantages of $\lambda$ based design rules over micron based design rules?
- Define threshold voltage? Express it in terms of body effect?
- Compare a pseudo NMOS inverter to a saturated load inverter.
- What are the advantages of pass transistor logic when compared to the conventional CMOS logic? (any two)
- Compare a carry look ahead adder to a carry bypass adder.
- Explain the need for testing.
- What are the advantages of FPGA based design? Answer one full questions from each module. Each full Question Carries 20 marks.
- (a) Explain Deal-Grove model for oxidation.
- (b) Explain the twin well process for fabricating a CMOS transistor?
- (a) Explain MBE. What are the advantages of MBE?
- (b) Explain the steps involved in photo lithography.
- Explain the short channel effects in a MOSFET.
- (a) Explain the CV characteristics of a MOSFET.
- (b) Explain the different type of scaling implemented in MOSFETs?
- (a) Design an 19-bit square root carry select adder? What is the worst case propagation delay
- (b) Explain the VTC of a CMOS inverter.
- (a) Explain the working of a 16 bit carry bypass adder. Find out the worst case propagation delay for the same
- (b) Derive the expression for dynamic power dissipation of a static CMOS inverter.
- (a) Explain the working of a 6T DRAM cell
- (b) Design the CMOS implementation of a NAND based ROM array to store 4 bytes 1011, 1000, 0110, 1101?
- Explain the different test generation methods in VLSI. ( $4 \times 20=80$ Marks)