B.TECH - Semester 6 vlsi design Question Paper 2021 (dec)
Practice authentic previous year university questions for better exam preparation.
Sample Questions
- Compare dry and wet oxidation.
- What is channeling? How can it be reduced?
- Explain electromigration.
- What is latch up in CMOS? How can it be avoided?
- Explain psuedo NMOS inverter Compare it with static CMOS inverter.
- Why does NMOS pars a weak ' 1 ' and PMOS pars a weak ' 0 '?
- Give the stick diagram of a two input NOR gate.
- Draw a 3 transistor dynamic RAM cell and explain its operation.
- With circuit diagram explain the configuration of a $4 \times 4$ NAND-ROM array.
- Explain stuck at 1 and short circuit faults in CMOS layout. Answer two questions from each Module. Each question carries 10 marks.
- Elaborate on pre deposition and derive in processes in diffusion.
- Discuss various types of capacitors fabricated in ICS. What are the advantages of oxide isolated capacitors as compared to junction capacitors?
- Explain the process of evaporation and sputtering for metal deposition.
- Discuss various capacitances in a MOSFET.
- Explain : (a) Channel length modulation. 5
- Explain : (b) How carries effects.
- Explain static power dissipation and short circuit power dissipation with reference to CMOS logic.
- How are sequential faults caused in CMOS? Give examples.
- Explain the operation of a carry look ahead adder. Show a CMOS implementation of a 4 bit carry look a head generator.
- (a) Explain principle of an EEPROM cell.
- (b) Draw the circuit diagram of a differential sense amplifier and explain. ( $6 \times 10=60$ Marks)