B.TECH - Semester 7 nanoelectronics Question Paper 2019 (jul)
Practice authentic previous year university questions for better exam preparation.
Sample Questions
- Explain any two limitations of microelectronics.
- List any four characteristics of square quantum well.
- Differentiate between dry oxidation and wet oxidation method.
- List the disadvantages of iron ball milling process for nano particle fabrication.
- Explain modulation doping.
- Write notes on the different types of multiple quantum wells.
- Write notes on real space transfer in quantum heterostructures.
- Derive the expression for the voltage required for tunneling through a nanocapacitor.
- Explain the working of a sub-band photodetector.
- Explain the concept of hot electrons. Answer any one question from each Module.
- (a) Explain the different characteristic lengths in a mesoscopic system. 10
- (b) Show that the density of states in a 2D semiconductor material is independent of energy. 10
- (a) Compare and contrast the features of triangular and parabolic quantum wells. 10
- (b) Determine the electron wave function of an electron in a square well of finite potential. (State all your assumptions clearly). 10
- (a) Sketch and label a CVD reactor and explain the different steps involved in the CVD process. 10
- (b) Explain the different emission and interaction processes between electron beam and the sample. 10
- (a) Illustrate the principle of imaging using a STM. 10
- (b) DC sputtering cannot be used for coating of non-conducting materials. Justify. Explain how RF sputtering overcome this advantage. 10 Module - III
- (a) Explain the Aharonov-Bohm effect with the help of diagrams and equations. 8
- (b) Explain the concept of coulomb blockade. Obtain the conditions to be fulfilled to observe single electron effect. 12
- (a) Explain integer quantum hall effect. 8
- (b) Differentiate between multiple quantum well and super lattice. Explain the model for super lattice proposed by Kronig and Penney. 12
- (a) Draw the schematic representation of the conduction band of a resonant tunnel diode for
- (i) no voltage applied (ii) increasing applied voltages. Explain its I-V characteristics. 10
- (b) Illustrate the working of quantum well optical modulator. 10
- (a) Explain the device structure and working quantum well laser. 10
- (b) MODFETs are known as high electron mpbility transistors. Justify with the help of energy band diagram.