B.TECH - Semester 7 optoelectronic devices Question Paper 2008 (dec)
Practice authentic previous year university questions for better exam preparation.
Sample Questions
- Distinguish between absorption and radiation in semiconductor devices.
- Give an account on quantum confined stark effect.
- Define responsivity and quantum efficiency
- Explain Avalanche multiplication and give an expression for Avalanche multiplication coefficient.
- Write notes on MSM photo diode.
- Draw the block diagram of coherent detection and give its merits
- Explain the working principle of Acousto optic modulator.
- Describe the reason for homogeneous and inhomogeneous line broadening mechanism.
- Write notes on Rare earth doped lasers.
- Explain the laser action in a $\cdot 2$ level lasing medium. $$ (10 \times 4=40 \text { Marks }) $$ P.T.O. PART - B Answer any two questions from each Module.
- Explain in detail about the classification of semiconductors based on bandgap structures. Explain why direct band gap semiconductor is preferred to indirect gap semiconductor for fabricating LED.
- (a) Explain deep level transition and Auger recombination in semiconductors?
- (b) Describe the equation for absorption coefficient of a semiconductor?
- Explain with neat diagram, different types of absorption in semiconductors?
- (a) What is electro optic effect?
- (b) How can this effect be used for modulating the phase and amplitude of an optical signal?
- Explain the V-I characteristics and spectral response of a solar cell. Give its design consideration.
- With a neat diagram explain the construction details and principle of SLED and compare its features with ELED.
- Explain the working principle of LASER. Derive the threshold condition for Laser action.
- Explain the constructional features of QW lasers.
- Write short notes on (a) DFB Laser (b) Mode locking in semiconductors. ( $\mathbf{6} \boldsymbol{\times} \mathbf{1 0} \boldsymbol{=} \mathbf{6 0}$ Marks)