B.TECH - Semester 8 nanoelectronics Question Paper 2008 (may)
Practice authentic previous year university questions for better exam preparation.
Sample Questions
- Explain the principle of Molecular Beam Epitaxy (MBE).
- Discuss the principle of Atomic Force Microscopy (AFM)?
- Explain the fabrication of nano particle (a) grinding
- Explain the fabrication of nano particle (b) Laser ablation
- Define the term de Brogile wavelength and diffusion length.
- Distinguish between Quantum well (2D), quantum wires (1D) and quantum $\operatorname{dot}(0 \mathrm{D}) ?$
- Draw the block diagram of two strained SiGe heterostructures and list two applications.
- Explain Impurity scattering. P.T.O.
- Draw the schematic representation of the conduction band of a resonant tunnel diode with (a) no voltage applied
- Draw the schematic representation of the conduction band of a resonant tunnel diode with (b) increasing applied voltage. Also draw its current-voltage characteristics.
- Draw the structure of single electron transmitter and draw its current-voltage characteristics.
- State the important characteristics of vertical cavity surface emitting LASERS. $$ (10 \times 4=40 \text { Marks }) $$ Answer any two questions from each module. All questions carry 10 marks.
- Describe the physical vapour deposition by lon implantation and DC voltage sputtering.
- Explain about solgels and precipitation of Quantum dots.
- Discuss scanning Tunnelling microscopy and X-ray diffraction.
- Discuss the trends in Nanoelectronics and optoelectronics.
- Explain the basic properties of two-dimensional semiconductor nanostructures.
- Describe the MOFSET structure and NERi superlattices.
- Explain the features of MODFETs and quantum well photodetectors.
- Discuss an edge emitting laser based on self assembled quantum dots and hot electron transistor.
- Describe in detail the resonant tunnelling transistor and double heterostructure laser. $$ (6 \times 10=60 \text { Marks) } $$